EE 362 Electronic, Magnetic, & Optical Properties of Materials

Dr. Montoya, Spring 2024, 3-0 (3 credit hours)

EEP 208- MWF 12-12:50 pm

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Examples

Chapter 1 The Crystal Structure of Solids

ee362_Tables_1_1_and_1_2_Fig_1_1.pdf – examples of semiconductors and solids

ee362_Fig_1_4_Fig_1_5.pdf – examples of unit cells and lattices

ee362_Bravais_lattices.pdf – Bravais lattices

ee362_diamond_zincblende_lattices.pdf – Diamond and zincblende crystal lattices

ee362_imperfections_impurities.pdf – Imperfections and impurities in crystal lattices

Chapter 2 Introduction to Quantum Mechanics

ee362_Fig_2_1.pdf – photoelectric effect

ee362_Fig_2_5.pdf – 1D wave function versus potential examples

electron_infinite_potential_well.pdf – electron in a 4 Å wide infinite well

ee362_Fig_2_9_Fig_2_10.pdf – finite potential barrier and 1D wave function

electron_finite_barrier_of_finite_width.pdf – 1 eV e^- & 4 Å wide 12 eV potential barrier

ee362_Fig_2_11.pdf – 1 electron atom probability density functions for n = 1 & 2 w/ l =0

s_p_d_f_orbitals.pdf –electron orbitals (subshells)

Chapter 3 Introduction to the Quantum Theory of Solids

ee362_Fig_3_1.pdf – Overlapping one-electron atoms

ee362_Figs_3_2_to_3_4.pdf – Electron states splitting into bands

ee362_Fig_3_5_Fig_3_6.pdf – Kronig-Penney model for 1D lattice of one-electron atoms

ee362_Figs_3_8_to_3_11.pdf – Energy bands for 1D Kronig-Penney model

ee362_Figs_3_12_to_3_14.pdf – Valence and conduction electrons for silicon

ee362_Fig_3_11_Fig_3_16a.pdf – Conduction band electron energy versus k

ee362_Figs_3_16b_to_3_18.pdf – Valence band electron energy versus k and holes

ee362_Fig_3_27_Table_4_1.pdf – Density of energy states plot & select effective masses

ee362_Fig_3_33_and_Fermi_example.pdf – Plots of f_F(E), E_F, and example for GaAs

ee362_Fermi_example_2.pdf – Plots of f_F(E) [electrons] & 1- f_F(E) [holes] and Maxwell-Boltzmann approximation for GaAs

Chapter 4 The Semiconductor in Equilibium

ee362_Fig_4_1.pdf – Putting together g_c(E) & f_F(E) and g_v(E) & 1 - f_F(E).

ee362_Tables_4_1_4_2_Fig_4_2.pdf – Eff. density of states, mass, & n_i for Si, Ge, & GaAs

ee362_Si_eff_dens_states_charge_carriers.pdf – Eff. density of states for Si @ 300 K

ee362_Figs_4_3_to_4_7.pdf – Dopants in semiconductors

ee362_Tables_4_3_4_4.pdf – Ionization energies for dopants for Si, Ge, & GaAs

ee362_Figs_4_8_4_9.pdf – Fermi energies for extrinsic semiconductors

ee362_Fig_4_14.pdf – Compensated semiconductor electron & hole concentrations

ee362_Fig_4_16_to_Fig_4_18.pdf – Trends for doped semiconductors

Chapter 5 Carrier Transport Phenomena

ee362_Fig_5_2_Fig_5_3.pdf – mobility versus temperature & impurity concentration

ee362_Fig_5_4.pdf – resistivity versus impurity concentration

ee362_compensated_semiconductor_conductivity.pdf – example

ee362_Fig_5_11.pdf – diffusion of charges & diffusion currents

ee362_Fig_5_13.pdf – Hall effect on p-type and n-type semiconductors

Chapter 6 Nonequilibrium Excess Carriers in Semiconductors

ee362_Fig_6_14_Fig_6_15.pdf – quasi-Fermi energy levels (occur w/ excess charges)

Chapter 7 The pn Junction

ee362_Fig_7_1.pdf – pn junction

ee362_Fig_7_2.pdf – pn junction and space charge/depletion region

ee362_Fig_7_3.pdf – pn junction and energy bands & potential barriers

ee362_Fig_7_5_Fig_7_6.pdf – pn junction electric field and potential

pplus_n_junction_Ge.pdf – Germanium p⁺n junction example

ee362_Fig_7_12.pdf – Reverse bias breakdown of pn junction

Chapter 8 The pn Junction Diode

ee362_Fig_8_1.pdf – pn junction diode with differing bias & key assumptions/definitions

ee362_Fig_8_3.pdf – pn junction diode with forward bias

ee362_Fig_8_4_example.pdf – forward biased Ge pn junction diode excess carriers at depletion layer edges

pn_junction_Ge_fwd_bias.pdf – forward biased Ge pn junction diode excess carriers

ee362_Fig_8_8_example.pdf – J-V curve for pn junction diodes & Ge pn diode example

ee362_Fig_8_10.pdf – Total current densities for pn junction diodes

ee362_Fig_8_21.pdf – Small-signal minority carrier concentrations for pn junction diodes

Chapter 10 Fundamentals of the Metal-Oxide-Semiconductor Field-effect-Transistor

ee362_section_10_1_1.pdf – MOS capacitors and energy bands

ee362_Figs_10_9_and_10_10.pdf – Potentials, depletion layer depths and threshold potential & depth.

ee362_Fig_10_13.pdf – MOS energy levels, work functions, and affinities

ee362_Figs_10_14_to_10_16.pdf – various MOS energy bands for f_ms and f_ms vs doping

ee362_Figs_10_19_to_10_20.pdf – MOS energy bands & charge densities at threshold

ee362_threshold_voltage_example.pdf – MOS example w/ gold gate, SiO₂, & p-type silicon

ee362_Figs_10_23_to_10_27.pdf – MOS capacitance versus gate voltage

ee362_Figs_10_34_to_10_36.pdf – n-channel & p-channel MOSFETs

ee362_Figs_10_37_and_10_39.pdf – n-channel MOSFET op’n vs gate & drain voltages

ee362_Figs_10_40_and_10_42.pdf – n-channel MOSFET I_D vs gate & drain voltages

ee362_Fig_10_49.pdf – p-channel MOSFET and I_D equations

ee362_threshold_voltage_example_VSB_1V.pdf – repeat example w/ V_SB = 1 V

ee362_Figs_10_52_to_10_55.pdf – small-signal equiv. circuit models for MOSFET

Chapter 12 The Bipolar Transistor

ee362_Figs_12_1_to_12_3.pdf – BJT layout

ee362_Figs_12_4_and_12_6.pdf – BJT operation in active mode

ee362_Figs_12_8_and_12_9.pdf – BJT biasing, modes, and load line

ee362_Table_12_1_and_Fig_12_13.pdf – BJT nomenclature and geometry

ee362_Figs_12_14_and_12_16.pdf – BJT minority carrier concentration distributions

ee362_Figs_12_18_and_12_19.pdf – BJT current densities

ee362_Table_12_3.pdf – BJT current gains and factors